CGD And IFPEN Demo a GaN-Based VDC Inverter Outperforming SiC

UK-based semiconductor manufacturer Cambridge GaN Devices (CGD) and French public research organization IFP Energies nouvelles (IFPEN) have developed a demo which confirms the suitability of CGD’s ICeGaN®650 V GaN ICs (Gallium Nitride-based transistors) in a multi-level, 800 VDC inverter. The demo delivers super-high power density – 30 kW/l – a result greater than the one achieved by more expensive, state-of-the-art silicon-carbide (SiC)-based devices. The inverter realization also demonstrates the ease of paralleling that ICeGaN technology enables; each inverter node has three 25 mΩ / 650 V ICeGaN ICs – 36 devices in total – in parallel.

CGD ICeGaN transistors

This multi-level GaN Inverters can power electric motors to over 100 kW peak, 75 kW continuous power. The CGD/IFPEN demo features: a high voltage input of up to 800 Vdc; 3-phase output; a peak current of 125 Arms (10s) (180 Apk); and a continuous current of 85 Arms continuous (120 Apk).

The ICeGaN multi-level design proposed by IFPEN reveals several benefits:

  • Increased Efficiency: the improvement in the efficiency of the traction inverter leads to an increase in battery range and a reduction in charging cycles. It also leads to a reduction in battery cost if the initial range (iso-range) is maintained;
  • Higher switching frequencies: GaN transistors can operate at much higher frequencies than silicon transistors. This reduces iron losses in the motor, particularly in the case of machines with low inductances;
  • Reduced Electromagnetic Interferences: 3-level topology minimizes EMI and enhances the reliability of the system;
  • Enhanced thermal management: insulated metallized substrate boards featuring an aluminium core facilitate superior thermal dissipation, ensuring optimal operating temperatures and extending the lifespan of the system and associated GaN devices;
  • Modular design: this facilitates scalability and adaptability for varying system requirements.

“We are super excited at this first result of our partnership with IFPEN. 800 VDC supports the 800 V bus which is being increasingly adopted by the EV industry. By addressing automotive and other high voltage inverter applications with energy-efficient ICeGaN-based solutions we are delivering on CGD’s key commitment – sustainability.”

Andrea Bricconi, Chief Marketing Officer at CGD

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