German semiconductor manufacturer Infineon Technologies will release the first silicon carbide (SiC) products based on its 200 mm SiC wafer manufacturing technology to customers during the first quarter of 2025. The products provide SiC power technology for high-voltage applications, including renewable energies, trains, and EVs, and will be manufactured in Villach, Austria.
Additionally, the transition of Infineon’s manufacturing site in Kulim, Malaysia, from 150-millimeter wafers to the larger and more efficient 200-millimeter diameter wafers is fully on track. The newly built Module 3 is poised to commence high-volume production aligned with market demand.
“By ramping up SiC production in Villach and Kulim in phases, we are improving cost-efficiency and continuing to ensure product quality. At the same time, we are making sure our manufacturing capacities can meet the demand for SiC-based power semiconductors.”
Dr. Rutger Wijburg, Chief Operations Officer of Infineon
SiC semiconductors have revolutionized high-power applications by switching electricity even more efficiently, demonstrating high reliability and robustness under extreme conditions, and by making even smaller designs possible. Infineon’s SiC products let customers develop energy-efficient solutions for EVs, fast charging stations and trains as well as renewable energy systems and AI data centers. The release to customers of the first SiC products based on the 200-millimeter wafer technology marks a substantial step forward in Infineon’s SiC roadmap, with a strong focus on providing customers with a comprehensive portfolio of high-performance power semiconductors that promote green energy and contribute to CO 2 reduction.
